Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

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£10.20

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£12.20

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10 - 90£1.02£10.20
100 - 490£0.869£8.69
500 - 990£0.765£7.65
1000 +£0.663£6.63

*price indicative

Packaging Options:
RS Stock No.:
178-3950
Mfr. Part No.:
SQD40031EL_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

186 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Transistor Material

Si

Width

2.38mm

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

RoHS Status: Exempt

COO (Country of Origin):
TW

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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