Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
- RS Stock No.:
- 178-3950
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
Subtotal (1 pack of 10 units)*
£9.06
(exc. VAT)
£10.87
(inc. VAT)
FREE delivery for orders over £50.00
- 1,040 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £0.906 | £9.06 |
100 - 490 | £0.772 | £7.72 |
500 - 990 | £0.68 | £6.80 |
1000 + | £0.589 | £5.89 |
*price indicative
- RS Stock No.:
- 178-3950
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | P | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | DPAK (TO-252) | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 136 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 186 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 2.38mm | |
Forward Diode Voltage | 1.5V | |
Minimum Operating Temperature | -55 °C | |
Height | 6.22mm | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 186 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 2.38mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 6.22mm | ||
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