Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£457.50

(exc. VAT)

£550.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.183£457.50

*price indicative

RS Stock No.:
165-2751
Mfr. Part No.:
SI9933CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

58 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

17 nC @ 10 V, 8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

4mm

Length

5mm

Height

1.55mm

Minimum Operating Temperature

-50 °C

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



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