Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF

RS Stock No.:: 688-7204
Mfr. Part No.:: IRLB3034PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF

Bulk discount available

Subtotal (1 pack of 2 units)*

£4.98

(exc. VAT)

£5.98

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

70 unit(s) ready to ship
Plus 104 unit(s) ready to ship from another location
Plus 136 unit(s) shipping from 14 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£2.49	£4.98
20 - 48	£2.24	£4.48
50 - 98	£2.09	£4.18
100 - 198	£1.965	£3.93
200 +	£1.82	£3.64

*price indicative

RS Stock No.:: 688-7204
Mfr. Part No.:: IRLB3034PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	343 A
	Maximum Drain Source Voltage	40 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	375 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	4.83mm
	Typical Gate Charge @ Vgs	108 nC @ 4.5 V
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 343 A
	Maximum Drain Source Voltage 40 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 375 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Width 4.83mm
	Typical Gate Charge @ Vgs 108 nC @ 4.5 V
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 9.02mm

Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF

This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.

Features & Benefits

• Capable of handling a maximum continuous drain current of 343A
• Optimised for logic level drive for simplified control
• Designed for high-speed power switching requirements
• Wide operating temperature range from -55°C to +175°C
• Superior gate threshold of 1V to 2.5V benefits low voltage operations

Applications

• Ideal for DC motor drive systems
• Utilised in high efficiency synchronous rectification setups
• Suitable for uninterruptible power supplies
• Effective in hard switched and high-frequency circuits

What are the maximum power dissipation capabilities of this component?

The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.

How does the low RDS(on) contribute to performance?

The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.

Can this MOSFET be used in automation systems?

Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.

What mounting options does this component offer?

It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.

How might this MOSFET improve power management in electronic circuits?

Its ability to handle high currents efficiently allows for increased power management effectiveness, leading to better overall system performance and reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.