Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Diode Configuration | Single | |
| Sub Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 3.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Maximum Power Dissipation Pd | 61mW | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 30.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Diode Configuration Single | ||
Sub Type SiC Schottky | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 3.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Maximum Power Dissipation Pd 61mW | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 30.73mm | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
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