Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 231-8074
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Sub Type | SiC Schottky | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 3.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Maximum Power Dissipation Pd | 61mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.73mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Diode Configuration Single | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Mount Type Through Hole | ||
Sub Type SiC Schottky | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 3.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Maximum Power Dissipation Pd 61mW | ||
Maximum Operating Temperature 150°C | ||
Height 30.73mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Related links
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- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12B
- onsemi Silicon Junction 15 A, 2-Pin 600 V TO-220
- Vishay Switching Diode 30 A, 3-Pin 600 V TO-220
- IXYS Silicon Junction 30 A, 2-Pin 600 V TO-220
- IXYS Silicon Junction 15 A, 2-Pin 600 V TO-220
