Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220
- RS Stock No.:
- 231-8073
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 231-8073
- Mfr. Part No.:
- QH12TZ600Q
- Brand:
- Power Integrations
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Power Integrations | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Sub Type | SiC Schottky | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Power Dissipation Pd | 61mW | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Maximum Forward Voltage Vf | 3.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 30.73mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Power Integrations | ||
Diode Configuration Single | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Sub Type SiC Schottky | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Power Dissipation Pd 61mW | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Maximum Forward Voltage Vf 3.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 30.73mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Related links
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