Infineon 650V 20A, Rectifier & Schottky Diode, PG-TO247-3 IDW40G65C5BXKSA2
- RS Stock No.:
- 258-0979
- Mfr. Part No.:
- IDW40G65C5BXKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£335.58
(exc. VAT)
£402.69
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £11.186 | £335.58 |
| 60 - 60 | £10.627 | £318.81 |
| 90 + | £10.179 | £305.37 |
*price indicative
- RS Stock No.:
- 258-0979
- Mfr. Part No.:
- IDW40G65C5BXKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | Through Hole | |
| Package Type | PG-TO247-3 | |
| Maximum Continuous Forward Current | 20A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Series | IDW40G65C5B | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type Through Hole | ||
Package Type PG-TO247-3 | ||
Maximum Continuous Forward Current 20A | ||
Peak Reverse Repetitive Voltage 650V | ||
Series IDW40G65C5B | ||
The Infineon ThinQ generation 5 represents leading edge technology for the SiC Schottky barrier diodes. Thanks to the more compact design and thin wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Higher system reliability due to lower operating temperatures
Reduced EMI
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Higher system reliability due to lower operating temperatures
Reduced EMI
Related links
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