MPN

Infineon 600 V 8 A Rectifier & Schottky Diode DPAK

RS Stock No.:: 258-0955
Mfr. Part No.:: IDD08SG60CXTMA2
Brand:: Infineon

Infineon 600 V 8 A Rectifier & Schottky Diode DPAK

Subtotal (1 reel of 2500 units)*

£2,880.00

(exc. VAT)

£3,455.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 02 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	£1.152	£2,880.00

*price indicative

RS Stock No.:: 258-0955
Mfr. Part No.:: IDD08SG60CXTMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Rectifier & Schottky Diode
	Mount Type	Surface
	Package Type	TO-252
	Maximum Continuous Forward Current If	8A
	Peak Reverse Repetitive Voltage Vrrm	600V
	Series	IDD08SG60C
	Peak Reverse Current Ir	700μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	2.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC1)
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Rectifier & Schottky Diode
	Mount Type Surface
	Package Type TO-252
	Maximum Continuous Forward Current If 8A
	Peak Reverse Repetitive Voltage Vrrm 600V
	Series IDD08SG60C
	Peak Reverse Current Ir 700μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 2.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC1)
	Automotive Standard No

Datasheet - IDD08SG60CXTMA2

The Infineon CoolSiC Schottky diodes 600V G3 feature the industry's lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Benchmark switching behaviour

No reverse recovery charge

Reduced cooling requirements

Enabling higher frequency/increased power density