onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-220 FFSP4065BDN-F085
- RS Stock No.:
- 195-2622
- Mfr. Part No.:
- FFSP4065BDN-F085
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£29.88
(exc. VAT)
£35.855
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £5.976 | £29.88 |
*price indicative
- RS Stock No.:
- 195-2622
- Mfr. Part No.:
- FFSP4065BDN-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | FFSP | |
| Diode Configuration | 2x Common Cathode Pair | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 882A | |
| Peak Reverse Current Ir | 160A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series FFSP | ||
Diode Configuration 2x Common Cathode Pair | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 882A | ||
Peak Reverse Current Ir 160A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 9.4mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 650V, D2, TO-220-3L Silicon Carbide Schottky Diode, 650 V, 40 A
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR FreeApplications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
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