onsemi 650V 11.6A, SiC Schottky Diode, 3-Pin DPAK FFSD0865B

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Subtotal (1 pack of 5 units)*

£12.10

(exc. VAT)

£14.50

(inc. VAT)

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  • Shipping from 02 February 2026
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Units
Per unit
Per Pack*
5 - 45£2.42£12.10
50 - 95£2.086£10.43
100 - 495£1.808£9.04
500 - 995£1.59£7.95
1000 +£1.446£7.23

*price indicative

Packaging Options:
RS Stock No.:
194-5750
Mfr. Part No.:
FFSD0865B
Brand:
onsemi
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Brand

onsemi

Mounting Type

Surface Mount

Package Type

DPAK

Maximum Continuous Forward Current

11.6A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

577A

COO (Country of Origin):
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC

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