onsemi 650V 11.6A, SiC Schottky Diode, 3-Pin DPAK FFSD0865B
- RS Stock No.:
- 194-5749
- Mfr. Part No.:
- FFSD0865B
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£2,370.00
(exc. VAT)
£2,845.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.948 | £2,370.00 |
*price indicative
- RS Stock No.:
- 194-5749
- Mfr. Part No.:
- FFSD0865B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Mounting Type | Surface Mount | |
Package Type | DPAK | |
Maximum Continuous Forward Current | 11.6A | |
Peak Reverse Repetitive Voltage | 650V | |
Diode Configuration | Single | |
Rectifier Type | Schottky Diode | |
Diode Type | SiC Schottky | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Peak Non-Repetitive Forward Surge Current | 577A | |
Select all | ||
---|---|---|
Brand onsemi | ||
Mounting Type Surface Mount | ||
Package Type DPAK | ||
Maximum Continuous Forward Current 11.6A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 577A | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
Related links
- onsemi 650V 11.6A 3-Pin DPAK FFSD0865B
- onsemi 650V 11.6A 3-Pin DPAK FFSD0865B-F085
- onsemi 650V 9.1A 3-Pin DPAK FFSD0665B
- onsemi 650V 18A 3-Pin DPAK FFSD1065A
- onsemi 650V 9.1A 3-Pin DPAK FFSD0665B-F085
- Wolfspeed 650V 32A 3-Pin DPAK C3D10065E
- Wolfspeed 650V 20A 3-Pin DPAK C3D06065E
- Wolfspeed 650V 11.5A 3-Pin DPAK C3D03065E