onsemi 1200V 17A, SiC Schottky Diode, 2-Pin TO-247 FFSH10120A-F085
- RS Stock No.:
- 178-4429
- Mfr. Part No.:
- FFSH10120A-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£6.38
(exc. VAT)
£7.66
(inc. VAT)
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- Shipping from 27 November 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £6.38 |
| 10 + | £5.50 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (In a Tube of 30)
£4.058
(exc. VAT)
£4.87
(inc. VAT)
- RS Stock No.:
- 178-4429
- Mfr. Part No.:
- FFSH10120A-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mounting Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current | 17A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 2 | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
| Peak Non-Repetitive Forward Surge Current | 850A | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Mounting Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current 17A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 850A | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
Related links
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- onsemi 650V 40A 3-Pin TO-247 FFSH4065BDN-F085
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