The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C

Units	Per unit	Per Pack*
2 - 8	£2.70	£5.40
10 - 18	£2.565	£5.13
20 - 48	£2.305	£4.61
50 - 98	£2.075	£4.15
100 +	£1.97	£3.94

Select all	Attribute	Value
	Brand	STMicroelectronics
	Mounting Type	Through Hole
	Package Type	TO-220AC
	Maximum Continuous Forward Current	10A
	Peak Reverse Repetitive Voltage	650V
	Diode Configuration	Single
	Rectifier Type	Schottky Diode
	Diode Type	SiC Schottky
	Pin Count	2
	Maximum Forward Voltage Drop	1.65V
	Number of Elements per Chip	1
	Diode Technology	SiC Schottky
	Peak Non-Repetitive Forward Surge Current	210A

	Select all
	Brand STMicroelectronics
	Mounting Type Through Hole
	Package Type TO-220AC
	Maximum Continuous Forward Current 10A
	Peak Reverse Repetitive Voltage 650V
	Diode Configuration Single
	Rectifier Type Schottky Diode
	Diode Type SiC Schottky
	Pin Count 2
	Maximum Forward Voltage Drop 1.65V
	Number of Elements per Chip 1
	Diode Technology SiC Schottky
	Peak Non-Repetitive Forward Surge Current 210A

STMicroelectronics 650V 10A, SiC Schottky Diode, 2-Pin TO-220AC STPSC10065D

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