onsemi 1200 V 50 A Diode 2-Pin TO-247-2LD NDSH50120C-F155
- RS Stock No.:
- 277-032
- Mfr. Part No.:
- NDSH50120C-F155
- Brand:
- onsemi
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Subtotal (1 unit)*
£20.43
(exc. VAT)
£24.52
(inc. VAT)
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In Stock
- Plus 391 unit(s) shipping from 26 January 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £20.43 |
| 10 - 99 | £18.39 |
| 100 + | £16.96 |
*price indicative
- RS Stock No.:
- 277-032
- Mfr. Part No.:
- NDSH50120C-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1568A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1568A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide Schottky Diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Avalanche rated 380 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
No reverse recovery
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