ROHM 350V 20A, Silicon Junction Diode, 2-Pin TO263S RFUH25NS3SFHTL
- RS Stock No.:
- 265-183
- Mfr. Part No.:
- RFUH25NS3SFHTL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 5 units)*
£15.95
(exc. VAT)
£19.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 995 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
---|---|---|
5 - 45 | £3.19 | £15.95 |
50 - 95 | £3.032 | £15.16 |
100 + | £2.808 | £14.04 |
*price indicative
- RS Stock No.:
- 265-183
- Mfr. Part No.:
- RFUH25NS3SFHTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Mounting Type | Through Hole | |
Package Type | TO263S | |
Maximum Continuous Forward Current | 20A | |
Peak Reverse Repetitive Voltage | 350V | |
Series | RFUH | |
Diode Type | Silicon Junction | |
Pin Count | 2 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand ROHM | ||
Mounting Type Through Hole | ||
Package Type TO263S | ||
Maximum Continuous Forward Current 20A | ||
Peak Reverse Repetitive Voltage 350V | ||
Series RFUH | ||
Diode Type Silicon Junction | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
The ROHM Super fast recovery diode is engineered for high performance in demanding applications. Known for its ultra-low switching loss, it provides exceptional reliability in rectification processes. With rigorous AEC-Q101 qualification, it supports high current overload capacities, making it a staple for electrical engineers keen on maintaining system integrity.
AEC Q101 qualified aligning with strict automotive industry standards
Ideal for general rectification purposes making it versatile for multiple circuit designs
Excellent reverse recovery characteristics facilitate rapid switching applications
Ideal for general rectification purposes making it versatile for multiple circuit designs
Excellent reverse recovery characteristics facilitate rapid switching applications
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