onsemi 1.2 kV 12 A Diode 2-Pin TO-247-2LD
- RS Stock No.:
- 218-671P
- Mfr. Part No.:
- NDSH10120C-F155
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
£44.70
(exc. VAT)
£53.60
(inc. VAT)
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In Stock
- 899 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 99 | £4.47 |
| 100 - 499 | £4.13 |
| 500 - 999 | £3.83 |
| 1000 + | £3.43 |
*price indicative
- RS Stock No.:
- 218-671P
- Mfr. Part No.:
- NDSH10120C-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.39V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 546A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.39V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 546A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling