Fairchild FGD3245G2_F085 IGBT, 23 A 450 V, 3-Pin DPAK, Surface Mount

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
864-8827
Mfr. Part No.:
FGD3245G2_F085
Brand:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Maximum Continuous Collector Current

23 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.1 x 2.3mm

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40 °C

Automotive Ignition IGBT, Fairchild Semiconductor


These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features


• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes


864-8802 FGB3040CS 400V 20A D2PAK

864-8805 FGB3040G2_F085 400V 25A DPAK-2

807-0767 FGD3040G2_F085 400V 25A DPAK

864-8880 FGI3040G2_F085 400V 25A I2PAK

864-8899 FGP3040G2_F085 400V 25A TO220

864-8809 FGB3245G2_F085 450V 23A D2PAK-2

864-8827 FGD3245G2_F085 450V 23A DPAK

807-0776 FGD3440G2_F085 400V 25A DPAK

864-8818 FGB3440G2_F085 400V 25A D2PAK-2

864-8893 FGP3440G2_F085 400V 25A TO220

807-8751 ISL9V5036P3_F085 360V 31A TO220

862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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