Infineon EVAL-M1-6ED2230-B1 IGBT Gate Driver for 6ED2230S12T, FP15R12W1T4 for Compressors, Industrial Drives
- RS Stock No.:
- 234-2102
- Mfr. Part No.:
- EVALM16ED2230B1TOBO1
- Brand:
- Infineon
Subtotal (1 unit)*
£489.90
(exc. VAT)
£587.88
(inc. VAT)
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Units | Per unit |
---|---|
1 + | £489.90 |
*price indicative
- RS Stock No.:
- 234-2102
- Mfr. Part No.:
- EVALM16ED2230B1TOBO1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Power Management Function | IGBT Gate Driver | |
For Use With | Compressors, Industrial Drives | |
Kit Classification | Evaluation Board | |
Featured Device | 6ED2230S12T, FP15R12W1T4 | |
Kit Name | EVAL-M1-6ED2230-B1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Power Management Function IGBT Gate Driver | ||
For Use With Compressors, Industrial Drives | ||
Kit Classification Evaluation Board | ||
Featured Device 6ED2230S12T, FP15R12W1T4 | ||
Kit Name EVAL-M1-6ED2230-B1 | ||
Evaluation Board for 1200 V Three-Phase SOI Gate Driver and EasyPIM™ IGBT modules
The EVAL-M1-6ED2230-B1 is a complete power evaluation board including a 1200 V three phase gate driver 6ED2230S12T and a EasyPIM™1B 1200 V three-phase module FP15R12W1T4. Designed for supporting motor drive applications with a power range up to 2 kW.
It provides AC and DC inputs as well as a 3-phase power output, offers a single emitter shunt for current sensing and a voltage divider for DC-link voltage measurement.
This power board is compatible with the iMOTION™ MADK (Modular Application Design Kit), such as Eval-M1- 099M-C for motor control.
It provides AC and DC inputs as well as a 3-phase power output, offers a single emitter shunt for current sensing and a voltage divider for DC-link voltage measurement.
This power board is compatible with the iMOTION™ MADK (Modular Application Design Kit), such as Eval-M1- 099M-C for motor control.
Summary of Features
Infineon Thin-Film-SOI technology
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode and OCP
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A
Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Over current protection with ±5% ITRIP threshold
Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
Matched propagation delay for all channels
Integrated 460 ns deadtime protection
Shoot-through (cross-conduction) protection
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode and OCP
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A
Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Over current protection with ±5% ITRIP threshold
Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
Matched propagation delay for all channels
Integrated 460 ns deadtime protection
Shoot-through (cross-conduction) protection
Benefits
1200 V, 15 A three phase input rectifier PIM (Power Integrated Modules) IGBT module
Fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC
Low switching losses
VCEsat with positive temperature coefficient
Low VCEsat
Al2O3substrate with low thermal restistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC
Low switching losses
VCEsat with positive temperature coefficient
Low VCEsat
Al2O3substrate with low thermal restistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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