This evaluation board demonstrates the functionalities of the Infineon IGBT gate driver, specifically the 1EDI60I12AF. It aids in the development of industrial power management solutions, improving the performance of applications such as electric vehicle chargers, industrial drives, and solar energy systems. Its design allows users to evaluate the driver’s capabilities while meeting the technical requirements for various high-voltage applications.

• Provides short circuit protection for enhanced safety
• Supports under voltage lock-out to prevent operational failures
• Incorporates a current sense amplifier for precise monitoring
• Bootstrap functionality optimises high-side gate driver performance
• Allows for input and output side separation for increased flexibility
• Operates with a high voltage supply range up to 500V

• Used in electric vehicle charger systems
• Integrated with industrial drives for power management
• Suitable for solar energy systems requiring robust gate drivers
• Employed in various power electronics development projects

The board requires a +15V high voltage supply and a +5V for onboard circuits. Both supplies must remain stable for optimal performance.

It detects overcurrent by measuring the voltage drop across a shunt resistor. When the threshold is exceeded, the gate driver inputs disable to protect the circuitry.

Yes, the resistor values can be adjusted to tailor the IGBT’s turn-on and turn-off characteristics. Care should be taken to manage potential noise and losses.

Yes, the board supports a separation feature by removing specific jumpers, allowing for a 1200V isolation between the input and output sides.

The board supports bi-directional currents and can connect to loads requiring alternating voltage, making it versatile for various applications.