TSU111IQ1T STMicroelectronics, Low Power, Op Amp, RRIO, 11.5kHz, 5 V, 6-Pin DFN

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Subtotal (1 pack of 5 units)*

£5.72

(exc. VAT)

£6.865

(inc. VAT)

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  • 999,999,995 unit(s) shipping from 06 April 2026
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Units
Per unit
Per Pack*
5 - 5£1.144£5.72
10 - 95£0.978£4.89
100 - 495£0.76£3.80
500 - 995£0.74£3.70
1000 +£0.722£3.61

*price indicative

Packaging Options:
RS Stock No.:
162-3657
Mfr. Part No.:
TSU111IQ1T
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Amplifier Type

Low Power

Mounting Type

Surface Mount

Package Type

DFN

Power Supply Type

Single

Number of Channels per Chip

1

Pin Count

6

Typical Single Supply Voltage

5 V

Typical Gain Bandwidth Product

11.5kHz

Output Type

CMOS

Typical Slew Rate

2.7V/ms

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Maximum Input Voltage

5.5 V

Rail to Rail

Rail to Rail Input/Output

Offset Voltage

235µV

Output Current

41 mA, 45 mA

Typical Voltage Gain

135 dB

Minimum Input Voltage

1.5 V

Dimensions

1.2 x 1.3 x 0.36mm

Input Offset Current

0.05nA

Width

1.3mm

Length

1.2mm

Height

0.36mm

Input Voltage Range

1.5 → 5.5 V

Typical Input Voltage Noise Density

220nV/√Hz

The TSU111 operational amplifier (op amp) offers an ultra low-power consumption of 900 nA typical and 1.2 μA maximum when supplied by 3.3 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow the TSU111 to be efficiently supplied by a coin type Lithium battery or a regulated voltage in low-power applications. The high accuracy of 150 μV max and 11.5 kHz gain bandwidth make the TSU111 ideal for sensor signal conditioning, battery supplied, and portable applications

Submicro ampere current consumption: Icc = 900 nA typ at 25 °C
Low offset voltage: 150 μV max at 25 °C, 235 μV max over full temperature range (-40 to 85 °C)
Low noise over 0.1 to 10 Hz bandwidth: 3.6 μVpp
Low supply voltage: 1.5 V - 5.5 V
Rail-to-rail input and output
Gain bandwidth product: 11.5 kHz typ
Low input bias current: 10 pA max at 25 °C
High tolerance to ESD: 4 kV HBM

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