onsemi N-Channel MOSFET, 50 A, 60 V, 5-Pin DFN NTMFS5C673NLT1G
- RS Stock No.:
- 922-9581
- Mfr. Part No.:
- NTMFS5C673NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
£7.98
(exc. VAT)
£9.58
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.399 | £7.98 |
| 200 - 480 | £0.344 | £6.88 |
| 500 + | £0.298 | £5.96 |
*price indicative
- RS Stock No.:
- 922-9581
- Mfr. Part No.:
- NTMFS5C673NLT1G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 13 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 46 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5.1mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.1mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 13 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 46 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5.1mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
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