Dual N-Channel MOSFET, 27 A, 12 V Depletion, 6-Pin CSP onsemi EFC8811R-TF

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

12 V

Package Type

CSP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

6.3 mΩ

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Width

1.77mm

Typical Gate Charge @ Vgs

100 nC @ 4.5 V

Length

3.4mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

0.22mm