Diodes Inc P-Channel MOSFET, 18.2 A, 60 V, 3-Pin SOT-223 DMP6023LE-13
- RS Stock No.:
- 921-1158
- Mfr. Part No.:
- DMP6023LE-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)*
£10.72
(exc. VAT)
£12.86
(inc. VAT)
FREE delivery for orders over £50.00
- 960 unit(s) ready to ship
- Plus 400 unit(s) ready to ship from another location
- Plus 5,280 unit(s) shipping from 11 September 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.536 | £10.72 |
100 - 480 | £0.471 | £9.42 |
500 - 980 | £0.46 | £9.20 |
1000 - 2480 | £0.447 | £8.94 |
2500 + | £0.437 | £8.74 |
*price indicative
- RS Stock No.:
- 921-1158
- Mfr. Part No.:
- DMP6023LE-13
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | P | |
Maximum Continuous Drain Current | 18.2 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 35 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 17.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 53.1 nC @ 10 V | |
Length | 6.55mm | |
Number of Elements per Chip | 1 | |
Width | 3.55mm | |
Transistor Material | Si | |
Height | 1.65mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 18.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 17.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 53.1 nC @ 10 V | ||
Length 6.55mm | ||
Number of Elements per Chip 1 | ||
Width 3.55mm | ||
Transistor Material Si | ||
Height 1.65mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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