DiodesZetex Single 1 Type N-Channel MOSFET, 360 mA, 50 V Enhancement, 6-Pin SC-88 DMN53D0LDW-7
- RS Stock No.:
- 921-1105
- Mfr. Part No.:
- DMN53D0LDW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
£4.60
(exc. VAT)
£5.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | £0.046 | £4.60 |
| 500 - 900 | £0.042 | £4.20 |
| 1000 - 1900 | £0.041 | £4.10 |
| 2000 - 2900 | £0.04 | £4.00 |
| 3000 + | £0.039 | £3.90 |
*price indicative
- RS Stock No.:
- 921-1105
- Mfr. Part No.:
- DMN53D0LDW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 310mW | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Length | 2.2mm | |
| Standards/Approvals | J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202, RoHS | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 310mW | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Length 2.2mm | ||
Standards/Approvals J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202, RoHS | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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