Diodes Inc N-Channel MOSFET, 2.6 A, 30 V, 3-Pin SOT-323 DMN3067LW-7
- RS Stock No.:
- 921-1094P
- Mfr. Part No.:
- DMN3067LW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£29.75
(exc. VAT)
£35.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 950 | £0.119 |
| 1000 - 1950 | £0.091 |
| 2000 - 2950 | £0.084 |
| 3000 + | £0.077 |
*price indicative
- RS Stock No.:
- 921-1094P
- Mfr. Part No.:
- DMN3067LW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 98 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.6 nC @ 4.5 V | |
| Length | 2.2mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 98 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.35mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.6 nC @ 4.5 V | ||
Length 2.2mm | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.