N-Channel MOSFET, 43 A, 30 V, 3-Pin DPAK Diodes Inc DMN3010LK3-13
- RS Stock No.:
- 921-1076
- Mfr. Part No.:
- DMN3010LK3-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 20 units)**
£8.52
(exc. VAT)
£10.22
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | £0.426 | £8.52 |
100 - 480 | £0.276 | £5.52 |
500 - 980 | £0.246 | £4.92 |
1000 - 2480 | £0.22 | £4.40 |
2500 + | £0.214 | £4.28 |
**price indicative
- RS Stock No.:
- 921-1076
- Mfr. Part No.:
- DMN3010LK3-13
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 43 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 11.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.4 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.2mm | |
Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
Width | 6.7mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.2mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Width 6.7mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
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