onsemi N-Channel MOSFET, 200 A, 40 V, 5-Pin DFN NTMFS5C430NLT1G
- RS Stock No.:
- 920-9903
- Mfr. Part No.:
- NTMFS5C430NLT1G
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£5.87
(exc. VAT)
£7.045
(inc. VAT)
FREE delivery for orders over £50.00
- 3,115 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.174 | £5.87 |
50 - 95 | £1.012 | £5.06 |
100 - 495 | £0.878 | £4.39 |
500 - 995 | £0.772 | £3.86 |
1000 + | £0.702 | £3.51 |
*price indicative
- RS Stock No.:
- 920-9903
- Mfr. Part No.:
- NTMFS5C430NLT1G
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 200 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DFN | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 2.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 5.1mm | |
Typical Gate Charge @ Vgs | 32 nC @ 4.5 V, 70 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 6.1mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 5.1mm | ||
Typical Gate Charge @ Vgs 32 nC @ 4.5 V, 70 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET, 40V, ON Semiconductor
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