STMicroelectronics STripFET N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L
- RS Stock No.:
- 920-6651
- Mfr. Part No.:
- STP40NF10L
- Brand:
- STMicroelectronics
Save 48% when you buy 5000 units
Subtotal (1 tube of 50 units)*
£59.75
(exc. VAT)
£71.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
- Plus 1,750 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.195 | £59.75 |
| 100 - 450 | £0.921 | £46.05 |
| 500 - 950 | £0.784 | £39.20 |
| 1000 - 4950 | £0.657 | £32.85 |
| 5000 + | £0.619 | £30.95 |
*price indicative
- RS Stock No.:
- 920-6651
- Mfr. Part No.:
- STP40NF10L
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -17 V, +17 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 46 nC @ 5 V | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -17 V, +17 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 46 nC @ 5 V | ||
Transistor Material Si | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Height 9.15mm | ||
Minimum Operating Temperature -65 °C | ||
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