P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK Infineon IRFR9024NPBF
- RS Stock No.:
- 919-4826
- Mfr. Part No.:
- IRFR9024NPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 919-4826
- Mfr. Part No.:
- IRFR9024NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF
This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.
Features & Benefits
• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly
Applications
• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to Rapid response times
• Employed in industrial automation systems for added reliability
What is the maximum power dissipation of this component?
It has a maximum power dissipation capability of 38W.
How does the product handle gate voltages?
The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.
What is the thermal performance of the device?
It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.
Is it easy to mount on a PCB?
Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.
How does this MOSFET perform under varying temperatures?
It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.