N-Channel MOSFET, 116 A, 30 V, 3-Pin TO-220AB Infineon IRL2203NPBF
- RS Stock No.:
- 919-4801
- Mfr. Part No.:
- IRL2203NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£46.20
(exc. VAT)
£55.45
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | £0.924 | £46.20 |
| 250 - 950 | £0.714 | £35.70 |
| 1000 - 2450 | £0.695 | £34.75 |
| 2500 + | £0.678 | £33.90 |
*price indicative
- RS Stock No.:
- 919-4801
- Mfr. Part No.:
- IRL2203NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 116 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 180 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 116 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 180 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 60 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
Series HEXFET | ||
- COO (Country of Origin):
- PH