Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

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Subtotal (1 tube of 50 units)*

£52.50

(exc. VAT)

£63.00

(inc. VAT)

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  • 1,400 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£1.05£52.50
100 - 200£0.893£44.65
250 +£0.84£42.00

*price indicative

RS Stock No.:
919-4508
Mfr. Part No.:
IRFBG30PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Transistor Material

Si

Length

10.41mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

80 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.01mm

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor



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