Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin TSOP Vishay SI3900DV-T1-GE3
- RS Stock No.:
- 919-4277
- Mfr. Part No.:
- SI3900DV-T1-GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 919-4277
- Mfr. Part No.:
- SI3900DV-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 830 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSOP | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 830 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.7mm | ||
Length 3.1mm | ||
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN