STMicroelectronics STripFET P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK STD10P6F6
- RS Stock No.:
- 917-2747P
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£74.10
(exc. VAT)
£88.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.741 |
| 200 - 480 | £0.667 |
| 500 - 980 | £0.601 |
| 1000 + | £0.57 |
*price indicative
- RS Stock No.:
- 917-2747P
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V | |
| Width | 7.45mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.38mm | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.4 nC @ 10 V | ||
Width 7.45mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 2.38mm | ||
Forward Diode Voltage 1.1V | ||
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics