IXYS X2-Class N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

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Packaging Options:
RS Stock No.:
917-1498
Mfr. Part No.:
IXTY8N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

X2-Class

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Width

7.12mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS