N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXYS IXFH80N65X2

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
917-1439
Mfr. Part No.:
IXFH80N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

890 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

21.34mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

16.13mm

Series

HiperFET, X2-Class

Height

5.21mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings