Infineon HEXFET N-Channel MOSFET, 130 A, 40 V, 3-Pin DPAK IRLR3114ZTRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

7.49mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

2.39mm