Infineon HEXFET Dual N-Channel MOSFET, 7.6 A, 30 V, 6-Pin DFN2020 IRLHS6376TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.6 A

Maximum Drain Source Voltage

30 V

Package Type

DFN2020

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

6.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

2.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.8 nC @ 4.5 V

Length

2.1mm

Number of Elements per Chip

2

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V