Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF
- RS Stock No.:
- 915-5089
- Mfr. Part No.:
- IRL6342TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 40 units)*
£12.88
(exc. VAT)
£15.44
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 40 + | £0.322 | £12.88 |
*price indicative
- RS Stock No.:
- 915-5089
- Mfr. Part No.:
- IRL6342TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 19 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 19 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 11 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF
This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control
Applications
• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power
What are the maximum ratings for the device?
The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.
How does it perform in high-temperature environments?
It operates efficiently within a range of -55°C to +150°C, fitting for various applications.
Is it compatible with standard PCB layouts?
Yes, the surface mount design facilitates easy integration into standard PCB layouts.
What is the advantage of using a low-resistance MOSFET?
A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.