N-Channel MOSFET, 24 A, 200 V, 3-Pin D2PAK Infineon IRFS4620TRLPBF

  • RS Stock No. 915-5051
  • Mfr. Part No. IRFS4620TRLPBF
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 24 A
Maximum Drain Source Voltage 200 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 77.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 144 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 10.67mm
Transistor Material Si
Width 11.3mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 25 nC @ 10 V
Forward Diode Voltage 1.3V
Height 4.83mm
Maximum Operating Temperature +175 °C
Series HEXFET
330 In stock for FREE next working day delivery
Price Each (In a Pack of 10)
£ 0.529
(exc. VAT)
£ 0.635
(inc. VAT)
Units
Per unit
Per Pack*
10 +
£0.529
£5.29
*price indicative
Packaging Options:
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