N-Channel MOSFET, 9.4 A, 200 V, 3-Pin DPAK Infineon IRFR9N20DTRPBF

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Subtotal (1 pack of 20 units)*

£14.32

(exc. VAT)

£17.18

(inc. VAT)

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Units
Per unit
Per Pack*
20 +£0.716£14.32

*price indicative

Packaging Options:
RS Stock No.:
915-5036
Mfr. Part No.:
IRFR9N20DTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

86 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

7.49mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET