N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3702TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
915-4995
Mfr. Part No.:
IRFH3702TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

3mm

Typical Gate Charge @ Vgs

9.6 nC @ 4.5 V

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

0.95mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.