Infineon HEXFET N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF
- RS Stock No.:
- 915-4979
- Mfr. Part No.:
- IRF8721TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£10.08
(exc. VAT)
£12.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.504 | £10.08 |
| 200 - 480 | £0.479 | £9.58 |
| 500 - 980 | £0.449 | £8.98 |
| 1000 - 1980 | £0.419 | £8.38 |
| 2000 + | £0.388 | £7.76 |
*price indicative
- RS Stock No.:
- 915-4979
- Mfr. Part No.:
- IRF8721TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 4.5 V | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 8.3 nC @ 4.5 V | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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