P-Channel MOSFET, 3 A, 20 V, 6-Pin DSBGA Texas Instruments CSD25304W1015T

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.55V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.5mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Length

1mm

Transistor Material

Si

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Series

NexFET