N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-247 Infineon IPW50R190CEFKSA1
- RS Stock No.:
- 914-0236
- Mfr. Part No.:
- IPW50R190CEFKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 6 units)*
£10.632
(exc. VAT)
£12.756
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 6 - 6 | £1.772 | £10.63 |
| 12 - 54 | £1.438 | £8.63 |
| 60 - 114 | £1.367 | £8.20 |
| 120 - 294 | £1.153 | £6.92 |
| 300 + | £1.097 | £6.58 |
*price indicative
- RS Stock No.:
- 914-0236
- Mfr. Part No.:
- IPW50R190CEFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18.5 A | |
| Maximum Drain Source Voltage | 550 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 127 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.21mm | |
| Typical Gate Charge @ Vgs | 47.2 nC @ 10 V | |
| Length | 16.13mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.85V | |
| Series | CoolMOS CE | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18.5 A | ||
Maximum Drain Source Voltage 550 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 127 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.21mm | ||
Typical Gate Charge @ Vgs 47.2 nC @ 10 V | ||
Length 16.13mm | ||
Maximum Operating Temperature +150 °C | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.85V | ||
Series CoolMOS CE | ||