Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1
- RS Stock No.:
- 914-0191
- Mfr. Part No.:
- SPP15P10PHXKSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 914-0191
- Mfr. Part No.:
- SPP15P10PHXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | SIPMOS® | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 128 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.35V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 100 V | ||
Series SIPMOS® | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 128 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.57mm | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.35V | ||