N-Channel MOSFET, 180 A, 40 V, 2-Pin MG-WDSON-2 Infineon BSB014N04LX3GXUMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Package Type

MG-WDSON-2

Mounting Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

89 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

5.05mm

Typical Gate Charge @ Vgs

148 nC @ 10 V, 71 nC @ 4.5 V

Length

6.35mm

Maximum Operating Temperature

+150 °C

Height

0.6mm

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-40 °C

Series

OptiMOS