P-Channel MOSFET, 39 A, 30 V, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

30 V

Package Type

PG-TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20 nC @ 10 V

Length

3.4mm

Maximum Operating Temperature

+150 °C

Width

3.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

OptiMOS P

Height

1.1mm

Forward Diode Voltage

1.1V