N-Channel MOSFET, 55 A, 100 V, 3-Pin TO-220AB Infineon IRL2910PBF

RS Stock No.:: 913-3856
Mfr. Part No.:: IRL2910PBF
Brand:: Infineon

N-Channel MOSFET, 55 A, 100 V, 3-Pin TO-220AB Infineon IRL2910PBF

View all MOSFETs

Discontinued product

RS Stock No.:: 913-3856
Mfr. Part No.:: IRL2910PBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	26 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	4.69mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10.54mm
Typical Gate Charge @ Vgs	140 nC @ 5 V
Minimum Operating Temperature	-55 °C
Height	8.77mm
Series	HEXFET