N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF

Stock information currently inaccessible
RS Stock No.:
913-3806
Mfr. Part No.:
IRLR2905PBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

48 nC @ 5 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

COO (Country of Origin):
MY

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy