N-Channel MOSFET, 31 A, 650 V, 3-Pin TO-220 Infineon IPP60R099CPXKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Minimum Operating Temperature

-55 °C

Height

9.45mm

Series

CoolMOS CP