N-Channel MOSFET, 70 A, 100 V, 3-Pin DPAK Infineon IPD70N10S312ATMA1

Subtotal (1 reel of 2500 units)*

£3,190.00

(exc. VAT)

£3,827.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£1.276£3,190.00

*price indicative

RS Stock No.:
911-5000
Mfr. Part No.:
IPD70N10S312ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

6.22mm

Length

6.5mm

Number of Elements per Chip

1

Series

OptiMOS T

Minimum Operating Temperature

-55 °C

Height

2.3mm

COO (Country of Origin):
DE